GuaranTee Supplier
11 Years
CJ3139KW
CJ3139KW is a single P-channel MOSFET featuring advanced power trench technology designed to optimize RDS(on) for efficient switching performance.
- Channel Configuration:Single P-Channel
- Drain-Source Voltage (VDS):30V
- Continuous Drain Current (ID):660mA
- Drain-Source On-Resistance (RDS(on)):520mΩ@4.5V
- Power Dissipation (PD):200mW
- Gate Threshold Voltage (VGS(th)):450mV
- Package:SOT-323
- Packaging Type:Tape&Reel
USD 0.04
3700
Supplier Information
Email:omnichip@ttbridge.com
Tel:15670610275
Recommended products
2N7002NXAKR-MS
2N7002NXAKR-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.
collect:0
FDC6327C-MS
FDC6327C-MS is a fast-switching MOSFET designed for efficient load switching in laptops and network equipment, with green product options available.
collect:0
T2N7002AK-MS
T2N7002AK-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.
collect:0
AO4832-MS
AO4832-MS is an N-channel enhancement-mode power MOSFET featuring trench DMOS technology, low RDS(ON), fast switching, and high-energy pulse capability.
collect:0









