OmniChip Technology
  • CJ3139KW
  • CJ3139KW
  • CJ3139KW
  • CJ3139KW
  • CJ3139KW
  • CJ3139KW
  • CJ3139KW
  • CJ3139KW
  • CJ3139KW
  • CJ3139KW

CJ3139KW

CJ3139KW is a single P-channel MOSFET featuring advanced power trench technology designed to optimize RDS(on) for efficient switching performance.

  • Channel Configuration:Single P-Channel
  • Drain-Source Voltage (VDS):30V
  • Continuous Drain Current (ID):660mA
  • Drain-Source On-Resistance (RDS(on)):520mΩ@4.5V
  • Power Dissipation (PD):200mW
  • Gate Threshold Voltage (VGS(th)):450mV
  • Package:SOT-323
  • Packaging Type:Tape&Reel

USD 0.04

3700

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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