Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
CJAE10P06
CJAE10P06 features advanced trench technology, excellent RDS(on), and low gate charge for efficient switching performance across a wide range of applications.
- Channel Configuration：Single P-Channel
- Drain-Source Voltage (VDS)：60V
- Continuous Drain Current (ID)：10A
- Drain-Source On-Resistance (RDS(on))：35mΩ@10V
- Power Dissipation (PD)：3W
- Gate Threshold Voltage (VGS(th))：3V
- Package：DFNWB-8L-EP(3x3)
- Packaging Type：Tape&Reel
USD 0.3
17000
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
2N7002NXAKR-MS
2N7002NXAKR-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.
collect：0
FDC6327C-MS
FDC6327C-MS is a fast-switching MOSFET designed for efficient load switching in laptops and network equipment, with green product options available.
collect：0
T2N7002AK-MS
T2N7002AK-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.
collect：0
AO4832-MS
AO4832-MS is an N-channel enhancement-mode power MOSFET featuring trench DMOS technology, low RDS(ON), fast switching, and high-energy pulse capability.
collect：0