OmniChip Technology
  • CJAE28SN06
  • CJAE28SN06
  • CJAE28SN06
  • CJAE28SN06
  • CJAE28SN06
  • CJAE28SN06
  • CJAE28SN06
  • CJAE28SN06
  • CJAE28SN06
  • CJAE28SN06

CJAE28SN06

CJAE28SN06 uses advanced SGT MOSFET technology to provide excellent RDS(ON) with low gate charge, supporting efficient switching across various applications.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):60V
  • Continuous Drain Current (ID):28A
  • Drain-Source On-Resistance (RDS(on)):15mΩ@4.5V
  • Power Dissipation (PD):32W
  • Gate Threshold Voltage (VGS(th)):1V
  • Package:DFNWB-8L(3x3)
  • Packaging Type:Tape&Reel

USD 0.4

output value: 38000

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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