GuaranTee Supplier
11 Years
CJAE28SN06
CJAE28SN06 uses advanced SGT MOSFET technology to provide excellent RDS(ON) with low gate charge, supporting efficient switching across various applications.
- Channel Configuration:Single N-Channel
- Drain-Source Voltage (VDS):60V
- Continuous Drain Current (ID):28A
- Drain-Source On-Resistance (RDS(on)):15mΩ@4.5V
- Power Dissipation (PD):32W
- Gate Threshold Voltage (VGS(th)):1V
- Package:DFNWB-8L(3x3)
- Packaging Type:Tape&Reel
USD 0.4
38000
Supplier Information
Email:omnichip@ttbridge.com
Tel:15670610275
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