GuaranTee Supplier
11 Years
CJAB35N03
CJAB35N03 uses advanced trench MOSFET technology to deliver excellent RDS(ON) with low gate charge, making it suitable for a wide range of switching applications.
- Channel Configuration:Single N-Channel
- Drain-Source Voltage (VDS):30V
- Continuous Drain Current (ID):35A
- Drain-Source On-Resistance (RDS(on)):7mΩ@10V
- Power Dissipation (PD):45W
- Gate Threshold Voltage (VGS(th)):1V
- Package:PDFNWB3.3x3.3-8L
- Packaging Type:Tape&Reel
USD 0.15
9000
Supplier Information
Email:omnichip@ttbridge.com
Tel:15670610275
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