OmniChip Technology
  • CJ3139KDW
  • CJ3139KDW
  • CJ3139KDW
  • CJ3139KDW
  • CJ3139KDW
  • CJ3139KDW
  • CJ3139KDW
  • CJ3139KDW
  • CJ3139KDW
  • CJ3139KDW

CJ3139KDW

CJ3139KDW is a dual P-channel MOSFET using advanced power trench technology to optimize RDS(ON), with two independent P-channel MOSFETs in one package.

  • Channel Configuration:Dual P-Channel
  • Drain-Source Voltage (VDS):20V
  • Continuous Drain Current (ID):660mA
  • Drain-Source On-Resistance (RDS(on)):520mΩ@4.5V
  • Power Dissipation (PD):150mW
  • Gate Threshold Voltage (VGS(th)):1.1V
  • Package:SOT-363
  • Packaging Type:Tape&Reel

USD 0.06

2100

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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