OmniChip Technology
  • CJAC110SN10H
  • CJAC110SN10H
  • CJAC110SN10H
  • CJAC110SN10H
  • CJAC110SN10H
  • CJAC110SN10H
  • CJAC110SN10H
  • CJAC110SN10H
  • CJAC110SN10H
  • CJAC110SN10H

CJAC110SN10H

CJAC110SN10H uses shielded-gate trench MOSFET technology to provide excellent RDS(ON) and low gate charge, supporting efficient switching across various applications.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):100V
  • Continuous Drain Current (ID):110A
  • Drain-Source On-Resistance (RDS(on)):5.2mΩ@10V
  • Power Dissipation (PD):130W
  • Gate Threshold Voltage (VGS(th)):4V
  • Package:PDFNWB5x6-8L
  • Packaging Type:Tape&Reel

USD 0.9

2900

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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