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OmniChip Technology
GuaranTee Supplier
11 Years
CJB130SN10
CJB130SN10 uses shielded-gate trench MOSFET technology to provide excellent RDS(ON) and low gate charge, supporting efficient switching across various applications.
- Channel Configuration：Single N-Channel
- Drain-Source Voltage (VDS)：100V
- Continuous Drain Current (ID)：130A
- Drain-Source On-Resistance (RDS(on))：4.3mΩ@10V
- Power Dissipation (PD)：250W
- Gate Threshold Voltage (VGS(th)) ：3V
- Package：TO-263-2L
- Packaging Type：Tape&Reel
USD 1.5
500
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
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