OmniChip Technology
  • CJAE2002
  • CJAE2002
  • CJAE2002
  • CJAE2002
  • CJAE2002
  • CJAE2002
  • CJAE2002
  • CJAE2002
  • CJAE2002
  • CJAE2002

CJAE2002

CJAE2002 uses advanced trench MOSFET technology with excellent RDS(ON), low gate charge and ESD protection, featuring a common-drain configuration for unidirectional or bidirection

  • Channel Configuration:Dual N-Channel
  • Drain-Source Voltage (VDS):18V
  • Continuous Drain Current (ID):15A
  • Drain-Source On-Resistance (RDS(on)):4.4mΩ@4.5V
  • Power Dissipation (PD):3W
  • Gate Threshold Voltage (VGS(th)) :1V
  • Package:TDFN-8-EP(3x3)
  • Packaging Type:Tape&Reel

USD 0.3

2600

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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