OmniChip Technology
  • CJU02N60M1
  • CJU02N60M1
  • CJU02N60M1
  • CJU02N60M1
  • CJU02N60M1
  • CJU02N60M1
  • CJU02N60M1
  • CJU02N60M1
  • CJU02N60M1
  • CJU02N60M1

CJU02N60M1

CJU02N60M1 is a high-voltage MOSFET with advanced termination, high avalanche and commutation energy capability, and a fast-recovery drain-source diode for efficient switching.

  • Channel Configuration:Single N-Channel
  • Drain-Source Voltage (VDS):600V
  • Continuous Drain Current (ID):2A
  • Drain-Source On-Resistance (RDS(on)):3.7Ω@10V
  • Power Dissipation (PD):31W
  • Gate Threshold Voltage (VGS(th)) :4V
  • Package:TO-252-2L
  • Packaging Type:Tape&Reel

USD 0.2

1300

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Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

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