Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
MMBT5551(RANGE:200-300)
MMBT5551 is a complementary transistor to MMBT5401, with hFE of 200–300, ideal for medium-power amplification and switching applications.
- Transistor Polarity：NPN
- Collector Current (Ic)：600mA
- Collector-Emitter Breakdown Voltage (Vceo)：160V
- Power Dissipation (Pd)：300mW
- DC Current Gain (hFE)：200
- Transition Frequency (fT)：300MHz
- Package：SOT-23
- Packaging Type：Tape&Reel
USD 0.02
output value: 365000
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
2SD1815(RANGE:100-200)
2SD1815 is an NPN transistor with 100–200 hFE, low VCE(sat), excellent hFE linearity, high fT and fast switching performance.
collect：0
SI2319
SI2319 is a -60V P-MOSFET with 160mΩ RDS(on) and -5V logic control for load switching in SOT-23.
collect：0
MMST5551(RANGE:100-300)
MMST5551 is an NPN transistor with 100–300 hFE in a compact SMD package, complementary to MMST5401 and suitable for medium-power amplification and switching.
collect：0
JSM015N10LG
JSM015N10LG is a 100V/350A N-MOSFET with 1.2mΩ RDS(on) in TOLL-8 for high-current switching.
collect：0