Product Images
Datasheet PDF
Enlarge View
Download PDF
OmniChip Technology
GuaranTee Supplier
11 Years
SHYG016N10NS1TA
SHYG016N10NS1TA is a 100V/370A N-MOSFET with 1.2mΩ RDS(on), split-gate trench tech, and ultra-low conduction loss for high-current switching.
- Drain-Source Voltage (Vdss) ：100V
- Continuous Drain Current (Id) ：370A
- On-Resistance (RDS(on)) ：1.2mΩ@10V
- Power Dissipation (Pd) ：431W
- Gate Threshold Voltage (Vgs(th))：3V
- Product packaging ：TOLL-8
- Packing Method ：Tape & Reel
- Gross Weight ：1.0915(g)
USD 0.941
8000
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
Recommended products
2N7002NXAKR-MS
2N7002NXAKR-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.
collect：0
FDC6327C-MS
FDC6327C-MS is a fast-switching MOSFET designed for efficient load switching in laptops and network equipment, with green product options available.
collect：0
T2N7002AK-MS
T2N7002AK-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.
collect：0
AO4832-MS
AO4832-MS is an N-channel enhancement-mode power MOSFET featuring trench DMOS technology, low RDS(ON), fast switching, and high-energy pulse capability.
collect：0