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OmniChip Technology
GuaranTee Supplier
11 Years
SHYG016N10NS1TA
SHYG016N10NS1TA is a 100V/370A N-MOSFET with 1.2mΩ RDS(on), split-gate trench tech, and ultra-low conduction loss for high-current switching.
- Drain-Source Voltage (Vdss) ：100V
- Continuous Drain Current (Id) ：370A
- On-Resistance (RDS(on)) ：1.2mΩ@10V
- Power Dissipation (Pd) ：431W
- Gate Threshold Voltage (Vgs(th))：3V
- Product packaging ：TOLL-8
- Packing Method ：Tape & Reel
- Gross Weight ：1.0915(g)
USD 0.941
output value: 8000
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
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