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OmniChip Technology
GuaranTee Supplier
11 Years
SI2309
SI2309 is a 60V/2A P-MOSFET with 160mΩ RDS(on) and low gate charge for efficient power switching in SOT-23.
- Drain-Source Voltage (Vdss) ：60V
- Continuous Drain Current (Id) ：1.6A
- On-Resistance (RDS(on)) ：180mΩ@4.5V；160mΩ@10V
- Power Dissipation (Pd) ：1.5W
- Gate Threshold Voltage (Vgs(th))：2V
- Product packaging ：SOT-23
- Packing Method ：Tape & Reel
- Gross Weight ：0.0381(g)
USD 0.058
12000
Supplier Information
Email：omnichip@ttbridge.com
Tel：15670610275
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