OmniChip Technology
  • IRF3205S-JSM
  • IRF3205S-JSM
  • IRF3205S-JSM
  • IRF3205S-JSM
  • IRF3205S-JSM
  • IRF3205S-JSM
  • IRF3205S-JSM
  • IRF3205S-JSM
  • IRF3205S-JSM
  • IRF3205S-JSM

IRF3205S-JSM

IRF3205S-JSM is a 55V/110A N-MOSFET with 8mΩ RDS(on) in TO-263 for high-current power switching.

  • Drain-Source Voltage (Vdss) :55V
  • Continuous Drain Current (Id) :110A
  • On-Resistance (RDS(on)) :8mΩ@10V
  • Power Dissipation (Pd) :200W
  • Gate Threshold Voltage (Vgs(th)):4V
  • Product packaging :TO-263​
  • Packing Method :Tape & Reel
  • Gross Weight :1.69(g)

USD 0.489

12000

contact shop

Product Images

Datasheet PDF

Enlarge View Download PDF

Supplier Information

Email:omnichip@ttbridge.com

Tel:15670610275

Recommended products

2N7002NXAKR-MS

2N7002NXAKR-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.

collect:0

FDC6327C-MS

FDC6327C-MS is a fast-switching MOSFET designed for efficient load switching in laptops and network equipment, with green product options available.

collect:0

T2N7002AK-MS

T2N7002AK-MS is a 60V, 300mA N-channel MOSFET in a SOT-23 package, featuring low on-resistance and low power consumption for switching and power management.

collect:0

AO4832-MS

AO4832-MS is an N-channel enhancement-mode power MOSFET featuring trench DMOS technology, low RDS(ON), fast switching, and high-energy pulse capability.

collect:0