OmniChip Technology
  • SS8050(RANGE:160-300)
  • SS8050(RANGE:160-300)
  • SS8050(RANGE:160-300)
  • SS8050(RANGE:160-300)
  • SS8050(RANGE:160-300)
  • SS8050(RANGE:160-300)
  • SS8050(RANGE:160-300)
  • SS8050(RANGE:160-300)
  • SS8050(RANGE:160-300)
  • SS8050(RANGE:160-300)

SS8050(RANGE:160-300)

SS8050 is an NPN power transistor with 160–300 hFE and power dissipation up to 2W at Tc=25°C, suitable for switching and amplification.

  • Transistor Polarity：NPN
  • Collector Current (Ic)：1.5A
  • Collector-Emitter Breakdown Voltage (Vceo)：25V
  • Power Dissipation (Pd)：625mW
  • DC Current Gain (hFE)：160
  • Transition Frequency (fT)：100MHz
  • Package：TO-92
  • Packaging Type：Bag

USD 0.05

8400

contact shop

Product Images

Download Pinout

Download Footprint

Datasheet PDF

Enlarge View Download PDF

Supplier Information

Email：omnichip@ttbridge.com

Tel：15670610275

Recommended products

NTR4101PT1G-MS

NTR4101PT1G-MS is a P-channel enhancement-mode power MOSFET featuring trench DMOS technology, low on-resistance, fast switching, and high avalanche energy capability.

collect：0

AO3409

AO3409 is a 30V, -3A P-channel MOSFET with 75mΩ RDS(ON) at -10V gate drive, offering fast switching for laptop power management and load switching.

collect：0

MS30N06

MS30N06 is a trench MOSFET featuring low RDS(ON), low gate charge, and 4.5V gate drive capability for battery protection and efficient switching applications.

collect：0

SIS402DN-T1-GE3-MS

SIS402DN-T1-GE3-MS is an N-channel MOSFET rated at 300V and 80A, featuring 4.7mΩ RDS(ON) for efficient power conversion and motor control.

collect：0